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Some of the material in is restricted to members of the community. By logging in, you may be able to gain additional access to certain collections or items. If you have questions about access or logging in, please use the form on the Contact Page.
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (similar to 2 to 3 layers), we...
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe, mechanically exfoliated onto a SiO layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field...
Pump-probe optical spectroscopy was used to investigate proposed charge-carrier multiplication via impact ionization in the M-1 insulating phase of VO2. By comparing the transient reflectivities of the film when pumped at less than and...
Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed...
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) have been extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect...
Some of the material in is restricted to members of the community. By logging in, you may be able to gain additional access to certain collections or items. If you have questions about access or logging in, please use the form on the Contact Page.
