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Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime

Permalink: http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000373056300060
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Wang, J., Rhodes, D., Feng, S., Nguyen, M. A. T., Watanabe, K., Taniguchi, T., … Zhu, J. (2016). Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime. Applied Physics Letters. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000373056300060
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Full Title

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime

Names

Wang, Junjie (author)
Rhodes, Daniel (author)
Feng, Simin (author)
Nguyen, Minh An T. (author)
Watanabe, K. (author)
Taniguchi, T. (author)
Mallouk, Thomas E. (author)
Terrones, Mauricio (author)
Balicas, Luis (author)
Zhu, J. (author)

Format

text

Date Issued

2016-02-08

Publication Note

The publisher’s version of record is available at http://www.dx.doi.org/10.1063/1.4941993

DOI URL

https://doi.org/10.1063/1.4941993

Identifier

FSU_libsubv1_wos_000373056300060
10.1063/1.4941993

Language

English

Choose the citation style.
Wang, J., Rhodes, D., Feng, S., Nguyen, M. A. T., Watanabe, K., Taniguchi, T., … Zhu, J. (2016). Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime. Applied Physics Letters. Retrieved from http://purl.flvc.org/fsu/fd/FSU_libsubv1_wos_000373056300060

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