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Some of the material in is restricted to members of the community. By logging in, you may be able to gain additional access to certain collections or items. If you have questions about access or logging in, please use the form on the Contact Page.
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (similar to 2 to 3 layers), we...
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe, mechanically exfoliated onto a SiO layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field...
Some of the material in is restricted to members of the community. By logging in, you may be able to gain additional access to certain collections or items. If you have questions about access or logging in, please use the form on the Contact Page.
