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Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) devices have received increasing attention over the past two decades due to their better electric and thermal performance. Compared with Si devices...
Recent developments in high voltage semiconductor power devices and the introduction of Wide Band Gap (WBG) based Silicon Carbide (SiC) and Gallium Nitride (GaN) MOSFETs and Diodes have provided power electronics applications engineers...
The newly emerged medium-voltage (MV) silicon carbide (SiC) MOSFETs, spanning 2.5 kV to 15 kV range, are under the rapid developments and have received increasing attention recently. Compared to Si devices, SiC MOSFETs have significant...
Switched-Capacitor Modular Multilevel Converter to Achieve Inductor-Less, Filter-Less, and Transformer-Less Medium-Voltage Power Conversion for High Power Density Applications
Power electronic applications that demand ratings exceeding 250kW require medium voltage (MV) converters to handle the high power (HP) levels. MV HP converters are widely used in motor drive applications such as in heavy-duty electric...
Some of the material in is restricted to members of the community. By logging in, you may be able to gain additional access to certain collections or items. If you have questions about access or logging in, please use the form on the Contact Page.
